Shenzhen Hengstar Technology Co., Ltd.

Shenzhen Hengstar Technology Co., Ltd.

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Shenzhen Hengstar Technology Co., Ltd.
HomeIzdelkiDodatki za industrijski pametni modulSpecifikacije pomnilniškega modula DDR3 UDIMM

Specifikacije pomnilniškega modula DDR3 UDIMM

Način plačila:
L/C,T/T,D/A
Incoterm:
FOB,EXW,CIF
Min. Naročilo:
1 Piece/Pieces
Prevoz:
Ocean,Air,Express,Land
  • Opis izdelka
Overview
Atributi izdelka

Model št.NSO4GU3AB

Sposobnost dobave in dodatne informacije

PrevozOcean,Air,Express,Land

Način plačilaL/C,T/T,D/A

IncotermFOB,EXW,CIF

Pakiranje & dostava
Prodajne enote:
Piece/Pieces

4GB 1600MHz 240-pin DDR3 UdimM


pregled zgodovine

Revision No.

History

Draft Date

Remark

1.0

Initial Release

Apr. 2022

 

Tabela za naročanje informacij

Model

Density

Speed

Organization

Component Composition

NS04GU3AB

4GB

1600MHz

512Mx64bit

DDR3 256Mx8 *16


Opis
Hengstar Unbuffered DDR3 SDRAM DIMMS (UNBUFFER DUAL DUAL DATA SINHRONA DRAM Dvojna vgrajena pomnilniška modula) so nizka moč, visokohitrostni delovni pomnilniški moduli, ki uporabljajo naprave DDR3 SDRAM. NS04GU3AB je 512m x 64-bitni dva ranga 4 GB DDR3-1600 CL11 1,5V SDRAM UNBUFFERED DIMM izdelek, ki temelji na šestnajstih 256m x 8-bitnih komponent FBGA. SPD je programiran za standardno zamudo Jedec DDR3-1600 čas 11-11-11 pri 1,5 V. Vsak 240-polni DIMM uporablja zlate kontaktne prste. SDRAM UNBUFFERED DIMM je namenjen uporabi kot glavni pomnilnik, ko je nameščen v sistemih, kot so računalniki in delovne postaje.


Lastnosti
 Dobava moči: VDD = 1,5V (1.425V do 1,575V)
VDDQ = 1,5V (1.425V do 1.575V)
800MHz FCK za 1600Mb/sec/pin
8 Neodvisna notranja banka
 Programirajoča latenca CAS: 11, 10, 9, 8, 7, 6
 Programirajoča aditivna zamuda: 0, Cl - 2 ali Cl - 1 ura
8-bitna prednastavitev
bud dolžina: 8 (prepletena brez omejitve, zaporedna samo z začetnim naslovom "000"), 4 s TCCD = 4, ki ne omogoča brezhibnega branja ali pisanja [bodisi med letenjem z uporabo A12 ali MRS]
BI-SVETILNI DALUKIJSKI PODATKI Strobe
 Internal (samo) kalibracija; Notranja kalibracija z ZQ PIN (RZQ: 240 OHM ± 1%)
On zaključek matrice z uporabo ODT PIN
 OBVEZNO OBLIKOVANJE 7 7.8US pri nižjih od TCAS 85 ° C, 3,9US pri 85 ° C <TCACE <95 ° C
Asinhrona ponastavitev
 Prilagodljiva moč podatkov-izhodnega pogona
 Fly-by Topologija
PCB: višina 1,18 ”(30 mm)
Rohs skladen in brez halogenov


Ključni parametri časa

MT/s

tRCD(ns)

tRP(ns)

tRC(ns)

CL-tRCD-tRP

DDR3-1600

13.125

13.125

48.125

2011/11/11


Nadzorna tabela

Configuration

Refresh count

Row address

Device bank address

Device configuration

Column Address

Module rank address

4GB

8K

32K A[14:0]

8 BA[2:0]

2Gb (256 Meg x 8)

1K A[9:0]

2 S#[1:0]


Opisi pin

Symbol

Type

Description

Ax

Input

Address inputs: Provide the row address  for ACTIVE commands, and the column
address and auto precharge bit (A10) for READ/WRITE commands, to select one location
out of the memory array in the respective bank. A10 sampled during a PRECHARGE
command determines whether the PRECHARGE applies to one bank (A10 LOW, bank
selected by BAx) or all banks (A10 HIGH). The address inputs also provide the op-code
during a LOAD MODE command. See the Pin Assignments table for density-specific
addressing information.

BAx

Input

Bank address inputs: Define the device bank to which an ACTIVE, READ, WRITE, or
PRECHARGE command is being applied. BA define which mode register (MR0, MR1,
MR2, or MR3) is loaded during the LOAD MODE command.

CKx,
CKx#

Input

Clock: Differential clock inputs. All control, command, and address input signals are
sampled on the crossing of the positive edge of CK and the negative edge of CK#.

CKEx

Input

Clock enable: Enables (registered HIGH) and disables (registered LOW) internal circuitry
and clocks on the DRAM.

DMx

Input

Data mask (x8 devices only): DM is an input mask signal for write data. Input data is
masked when DM is sampled HIGH, along with that input data, during a write access.
Although DM pins are input-only, DM loading is designed to match that of the DQ and DQS pins.

ODTx

Input

On-die  termination:  Enables  (registered  HIGH)  and  disables  (registered  LOW)
termination resistance internal to the DDR3 SDRAM. When enabled in normal operation,
ODT is only applied to the following pins: DQ, DQS, DQS#, DM, and CB. The ODT input will be ignored if disabled via the LOAD MODE command.

Par_In

Input

Parity input: Parity bit for Ax, RAS#, CAS#, and WE#.

RAS#,
CAS#,
WE#

Input

Command inputs: RAS#, CAS#, and WE# (along with S#) define the command being
entered.

RESET#

Input
(LVCMOS)

Reset: RESET# is an active LOW asychronous input that is connected to each DRAM and
the registering clock driver. After RESET# goes HIGH, the DRAM must be reinitialized as
though a normal power-up was executed.

Sx#

Input

Chip select: Enables (registered LOW) and disables (registered HIGH) the command
decoder.

SAx

Input

Serial address inputs: Used to configure the temperature sensor/SPD EEPROM address
range on the I2C bus.

SCL

Input

Serial
communication to and from the temperature sensor/SPD EEPROM on the I2C bus.

CBx

I/O

Check bits: Used for system error detection and correction.

DQx

I/O

Data input/output: Bidirectional data bus.

DQSx,
DQSx#

I/O

Data strobe: Differential data strobes. Output with read data; edge-aligned with read data;
input with write data; center-alig

SDA

I/O

Serial
sensor/SPD EEPROM on the I2C bus.

TDQSx,
TDQSx#

Output

Redundant data strobe (x8 devices only): TDQS is enabled/disabled via the LOAD
MODE command to the extended mode register (EMR). When TDQS is enabled, DM is
disabled and TDQS and TDQS# provide termination resistance; otherwise, TDQS# are no
function.

Err_Out#

Output (open
drain)

Parity error output: Parity error found on the command and address bus.

EVENT#

Output (open
drain)

Temperature event: The EVENT# pin is asserted by the temperature sensor when critical
temperature thresholds have been exceeded.

VDD

Supply

Power supply: 1.35V (1.283–1.45V) backward-compatible to 1.5V (1.425–1.575V). The
component VDD and VDDQ are connected to the module VDD.

VDDSPD

Supply

Temperature sensor/SPD EEPROM power supply: 3.0–3.6V.

VREFCA

Supply

Reference voltage: Control, command, and address VDD/2.

VREFDQ

Supply

Reference voltage: DQ, DM VDD/2.

VSS

Supply

Ground.

VTT

Supply

Termination voltage: Used for control, command, and address VDD/2.

NC

No connect: These pins are not connected on the module.

NF

No function: These pins are connected within the module, but provide no functionality.

Opombe : Spodnja tabela opisa PIN je celovit seznam vseh možnih zatičev za vse module DDR3. Vsi našteti zatiči lahko ne bo podprt v tem modulu. Za informacije, značilne za ta modul, glejte PIN naloge.


Funkcionalni blok diagram

4GB, modul 512MX64 (2rank od x8)

1


2


Opomba:
1. Krog ZQ na vsaki komponenti DDR3 je povezana z zunanjim 240Ω ± 1% upor, ki je vezan na ozemljitev. Uporablja se za kalibracijo komponentnega konca in izhodnega gonilnika.



Dimenzije modula


Pogled od spredaj

3

Pogled od spredaj

4

Opombe:
1. Vse dimenzije so v milimetrih (palcev); Max/min ali tipičen (tip), kjer je zapisano.
2.Toleranca na vseh dimenzijah ± 0,15 mm, razen če ni drugače določeno.
3. Dimenzijski diagram je namenjen samo referenci.

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